Materials Development for Nuclear Security

Bismuth Triiodide Room Temperature Semiconductor Detectors

af Paul Johns

Abstract: BiI3 has been investigated for its unique properties as a layered compound semiconductor for many decades. Among these are several qualities that make it an attractive candidate for a room temperature gamma ray sensor. However, despite the exceptional atomic, physical, and electronic properties of this material, good resolution gamma ray spectra had never been reported for BiI3. The shortcomings that have previously prevented BiI3 from reaching success as a gamma ray sensor are herein ... (Læs mere)